a. Make a sketch for the I-V characteristics (similar to that in Figure 9.4) for an nMOS transistor.


a. Make a draw for the I-V characteristics (concordant to that in Figure 9.4) for an nMOS transistor after a while = 5 mA/V2 and VT = 0.6 V. Include in your draw deflexions for the following values of VGS: 0.6 V, 1.1 V, 1.6 V, 2.1 V, and 2.6 V.

b. Also draw the saturation deflexion.

c. Suppose that a circumference has been purposed after a while the transistor operating after a while the admonish verse VDD = RDID + VDS, where VDD = 10 V and RD = 1 k. Include this admonish verse in your draw.

d. Calculate the coordinates for the sharp-end of the admonish verse that falls on the stipulation between the saturation and triode climes (Equation 9.6), then sign it in your draw.

e. What are the ranges for VDS and ID in the saturation clime?

f. Calculate the coordinates for the sharp-end where the transistor rests when VGS = 1.8 V, then sign it in your draw. Is this sharp-end in the triode or saturation clime?