Suppose that Mn and Mp in the CMOS inverter of Figure E9.15 are designed with (W/L)n = 3/2 and…


Suppose that Mn and Mp in the CMOS inverter of Figure E9.15 are purposed delay (W/L)n = 3/2 and (W/L)p = 8/2 (in units of lambda) and are simulated using a silicon process whose induction oxide density is tox = 150A°. Assuming that the effective mobility (in the medium) is ~50% of that in the largeness, weigh the values of n and p.